Writam Banerjee PhD

Dr. Writam Banerjee, is an Assistant Professor of Institute of Microelectronics of Chinese Academy of Science (IMECAS) at Beijing since 2014. He brings to IMECAS 5 years of experience in non-volatile memory research, and involved with the development and design of ultra high density 3D non-volatile ReRAM memory cell technology. From 2012-2013, Dr. Banerjee held the position of a visiting Scientist at PGI-7, Forschungszentrum Jülich GmbH, Germany, where he led the joint project of Intel Corporation, California and Forschungszentrum Jülich GmbH, Germany. He was engaged for the development of nano-crossbar ReRAM devices and integrated with the transistors, in collaboration with IMEC, Belgium. From 2007-2012, Dr. Banerjee has earned a Doctor of Philosophy (Ph.D.) degree in Electronic Engineering from the Chang Gung University, Taiwan. During his Ph.D. studies he has fabricated small Iridium-oxide nanocrystals and also studied nanocrystals based devices for flash and resistive switching memory with crossbar architecture. He received his M.Sc and B.Sc in Physics from Vidyasagar University, West Bengal, India. Dr. Banerjee has authored and co-authored over 50 publications in international journals and conference proceedings. His current research interests include the design, fabrication, characterization and analysis of novel high-k and nanocrystals for high density nanoscale non-volatile 3D ReRAM devices.